Inventor · Okazaki, JP

Ryouichi Kubokoya

3Patents
3h-index
6Co-inventors
36Inventor score

Filing activity: Sep 8, 1995 → Jan 29, 1998

Most-cited inventions

PatentTitleAreaCited byStatus
US5714408A Method of forming silicon nitride with varied hydrogen concentration Emerging Cross-Sectional Technologies 17 Expired
US5830771A Manufacturing method for semiconductor device Electricity 11 Expired
US6137156A Semiconductor device employing silicon nitride layers with varied hydrogen concentration Emerging Cross-Sectional Technologies 4 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.