Semiconductor device employing silicon nitride layers with varied hydrogen concentration
US6137156A · kind A · utility
4Cited by
4References
31Claims
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Key dates
| Filing date | Jan 29, 1998 |
| Grant date | Oct 24, 2000 |
| Priority date | — |
| Expiry date | Jan 29, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/114
Abstract
On a TEOS (tetraethyl ortho silicate) film and a surface of an aluminum wiring formed on a P-type silicon substrate, there is formed a low hydrogen content plasma SiN film on which a high hydrogen content plasma SiN film is laminated. The low hydrogen content plasma SiN film is lower in content of hydrogen than the high hydrogen content plasma SiN film. Accordingly, even when hydrogen is about to go toward and into the P-type silicon substrate side from the high hydrogen content plasma SiN film, the entry of hydrogen is blocked by the low hydrogen content plasma SiN film in which amount of Si--H bonds is reduced.
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