Semiconductor devices including silicide regions and methods of fabricating the same
US8835995B2 · kind B2 · utility
9Cited by
13References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 8, 2011 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Dec 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, a gate electrode structure including a gate electrode located on an active region of the semiconductor substrate, first and second epitaxial regions located in the active region at opposite sides of the gate electrode structure, and first and second silicide layers on upper surfaces of the first and second epitaxial regions, respectively. The first and second epitaxial regions include Si—X, where X is one of germanium and carbon, and at least a portion of each of the first and second silicide layers is devoid of X and includes Si—Y, where Y is a metal or metal alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.