Sangcheol Han
2Patents
1h-index
3Co-inventors
30Inventor score
Filing activity: Feb 13, 2018 → Apr 3, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10453749B2 | Method of forming a self-aligned contact using selective SiO2 deposition | Electricity | 7 | Active |
| US10916561B2 | Method of fabricating semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.