Method of forming a self-aligned contact using selective SiO2 deposition

US10453749B2 · kind B2 · utility

Assignee

• TOKYO ELECTRON LIMITED · JP

Inventors

• Kandabara Tapily · Mechanicville, US
• Sangcheol Han · Albany, US
• Soo Doo Chae · Albany, US

Key dates

• Filing date: Feb 13, 2018
• Grant date: Oct 22, 2019
• Expiry date: Feb 13, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/53295
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A substrate processing method for forming a self-aligned contact using selective SiO2 deposition is described in various embodiments. The method includes providing a planarized substrate containing a dielectric layer surface and a metal-containing surface, coating the dielectric layer surface with a metal-containing catalyst layer, and exposing the planarized substrate to a process gas containing a silanol gas for a time period that selectively deposits a SiO2 layer on the metal-containing catalyst layer on the dielectric layer surface. According to one embodiment, the method further includes depositing an etch stop layer on the SiO2 layer and on the metal-containing surfaces, depositing an interlayer dielectric layer on the planarized substrate, etching a recessed feature in the interlayer dielectric layer and stopping on the etch stop layer above the metal-containing surface, and filling the recessed feature with a metal.