Semiconductor device having capacitor integrated therein
US9520462B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2015 |
| Grant date | Dec 13, 2016 |
| Priority date | — |
| Expiry date | Nov 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
Abstract
Semiconductor devices are described that include a capacitor integrated therein. In an implementation, the semiconductor devices include a substrate including a dopant material of a first conductivity type. A plurality of trenches are formed within the substrate. The semiconductor devices also include a diffusion region having dopant material of a second conductivity type formed proximate to the trenches. A capacitor is formed within the trenches and at least partially over the substrate. The capacitor includes at least a first electrode, a second electrode, and a dielectric material formed between the first and second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.