Shinya Bohyama
3Patents
3h-index
5Co-inventors
36Inventor score
Filing activity: Mar 26, 2002 → Mar 4, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6756246B2 | Method for fabricating III-V group compound semiconductor | Electricity | 9 | Expired |
| US7399687B2 | Substrate of gallium nitride single crystal and process for producing the same | Electricity | 6 | Expired |
| US6946308B2 | Method of manufacturing III-V group compound semiconductor | Electricity | 3 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.