Method for fabricating III-V group compound semiconductor
US6756246B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2002 |
| Grant date | Jun 29, 2004 |
| Priority date | — |
| Expiry date | Mar 26, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a GaN-based III-V Group compound semiconductor is provided that utilizes a regrowth method based on the HVPE method to form a second III-V Group compound semiconductor layer having a flat surface on a first III-V Group compound semiconductor layer formed with a mask layer. The method uses a mixed carrier gas of hydrogen gas and nitrogen gas to control formation of a facet group including at least the {33-62} facet by the regrowth, and conducting the regrowth until a plane parallel to the surface of the first III-V Group compound semiconductor layer is once annihilated, thereby fabricating a III-V Group compound semiconductor having low dislocation density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.