Method of manufacturing III-V group compound semiconductor
US6946308B2 · kind B2 · utility
3Cited by
1References
7Claims
0Family size
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Key dates
| Filing date | Mar 26, 2003 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Sep 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
When a crystal layer of III-V Group nitride compound semiconductor is formed, a nitride compound semiconductor layer is first overlaid on a substrate to form a base layer and a III-V Group nitride compound semiconductor represented by the general formula InxGayAlzN (where 0≦x≦1, 0≦y≦1, 0≦z≦1, x+y+z=1) is epitaxially grown on the base layer by hydride vapor phase epitaxy at a deposition pressure of not lower than 800 Torr. By making the deposition pressure not lower than 800 Torr, the crystallinity of the III-V Group nitride compound semiconductor can be markedly improved and its defect density reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.