Srinath Krishman
2Patents
2h-index
3Co-inventors
27Inventor score
Filing activity: Sep 22, 2000 → Sep 22, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6344396B1 | Removable spacer technology using ion implantation for forming asymmetric MOS transistors | Electricity | 27 | Expired |
| US6472283B1 | MOS transistor processing utilizing UV-nitride removable spacer and HF etch | Electricity | 23 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.