Magnetic random access memory using current through MTJ write mechanism
US6269018A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2000 |
| Grant date | Jul 31, 2001 |
| Priority date | — |
| Expiry date | Apr 13, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory array includes a plurality of memory cells. Each memory cell includes a magnetic tunnel junction device having a first free ferromagnetic layer, a second free ferromagnetic layer and a highly conductive layer. The first ferromagnetic layer of each magnetic tunnel junction device extends in a direction that is substantially parallel to the second ferromagnetic layer of the magnetic tunnel junction device. The highly conductive layer of each magnetic tunnel junction device is formed between the first ferromagnetic layer and the second ferromagnetic layer of the magnetic tunnel junction device. A write current through each selected memory cell flows into the highly conductive layer and along at least a portion of the highly conductive layer. A self-field associated with the write current changes a first predetermined magnetization of the first and second ferromagnetic layers to a second predetermined magnetization. In a second embodiment, each memory cell includes a magnetic tunnel junction device having a first free ferromagnetic layer, a second pinned ferromagnetic layer, and a tunneling barrier layer formed between the first and second ferromagnetic layers. Th…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.