Magnetic random access memory using a series tunnel element select mechanism
US6331944A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 13, 2000 |
| Grant date | Dec 18, 2001 |
| Priority date | — |
| Expiry date | Apr 13, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A non-volatile memory array includes first and second pluralities of electrically conductive traces formed on a substrate. The second plurality of electrically conductive traces overlap first plurality of traces at a plurality of intersection regions. Each of a plurality of memory cells is located at an intersection region between one of the first plurality of traces and one of the second plurality of traces. At least one of the memory cells includes a non-linear selection element in series with a magnetic tunnel junction storage element. The non-linear selection element includes at least a first metallic electrode layer, a barrier layer and a second metallic electrode layer metal. The non-linear selection element has a non-linearity defined by a current having a first magnitude flowing through the non-linear selection element for a first bias voltage across the non-linear selection element that is ten times or more smaller than a current having a second magnitude flowing through the non-linear selection element for a second bias voltage across the non-linear selection element, such that the second bias voltage is about two times greater than the first bias voltage. The magnetic tu…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.