Sze Him Ng
3Patents
3h-index
5Co-inventors
36Inventor score
Filing activity: Aug 21, 1995 → Aug 25, 1998
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5629543A | Trenched DMOS transistor with buried layer for reduced on-resistance and ruggedness | Electricity | 114 | Expired |
| US5918137A | MOS transistor with shield coplanar with gate electrode | Electricity | 47 | Expired |
| US6172400A | MOS transistor with shield coplanar with gate electrode | Electricity | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.