MOS transistor with shield coplanar with gate electrode

US6172400A · kind A · utility

Assignee

• Spectrian Corporation · US

Inventors

• Sze Him Ng · Campbell, US
• Francois Hebert · San Mateo, US

Key dates

• Filing date: Aug 25, 1998
• Grant date: Jan 9, 2001
• Expiry date: Aug 25, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111

Abstract

A MOS transistor including a gate electrode on a gate oxide over a channel region between a source region and a drain region also includes a shield electrode at least partially on the gate oxide adjacent to, self-aligned with, and at least partially coplanar with the gate electrode and between the gate electrode and drain region. Placing the shield electrode on the gate oxide improves the gate-drain shielding, reduces the gate-drain capacitance, Cgd, and reduces hot electron related reliability hazard.