Te-Yang Lai
27Patents
1h-index
15Co-inventors
46Inventor score
Filing activity: Aug 20, 2019 → Jun 10, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11309398B2 | Semiconductor device and manufacturing method for the semiconductor device | Electricity | 2 | Active |
| US11848370B2 | Semiconductor device and manufacturing method for the semiconductor device | Electricity | 1 | Active |
| US12015066B2 | Triple layer high-k gate dielectric stack for workfunction engineering | Electricity | 1 | Active |
| US11011372B2 | Semiconductor devices and methods of manufacture | Electricity | 1 | Active |
| US12382671B2 | Semiconductor structure and manufacturing method for the semiconductor structure | Electricity | 0 | Active |
| US12136659B2 | Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices | Electricity | 0 | Active |
| US11777017B2 | Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices | Electricity | 0 | Active |
| US12125706B2 | Semiconductor device and method of manufacture | Electricity | 0 | Active |
| US12243932B2 | Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices | Electricity | 0 | Active |
| US11784052B2 | Dipole-engineered high-k gate dielectric and method forming same | Electricity | 0 | Active |
| US12033853B2 | Semiconductor devices and methods of manufacture | Electricity | 0 | Active |
| US12322595B2 | Semiconductor devices devices including crystallized layer having multiple crystalline orientations and methods of manufacture | Electricity | 0 | Active |
| US12417918B2 | Semiconductor device having doped gate dielectric layer and method for forming the same | Electricity | 0 | Active |
| US11817489B2 | Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices | Electricity | 0 | Active |
| US11257950B2 | Semiconductor structure and manufacturing method for the semiconductor structure | Electricity | 0 | Active |
| US10985266B2 | Method of gap filling for semiconductor device | Electricity | 0 | Active |
| US11791216B2 | Nanostructure field-effect transistor device and method of forming | Electricity | 0 | Active |
| US11710665B2 | Semiconductor device and method of manufacture | Electricity | 0 | Active |
| US11101180B2 | Semiconductor device and method of manufacture | Electricity | 0 | Active |
| US12020941B2 | Dipole-engineered high-k gate dielectric and method forming same | Electricity | 0 | Active |
| US11777031B2 | Semiconductor structure and manufacturing method for the semiconductor structure | Electricity | 0 | Active |
| US12387935B2 | Dipole-engineered high-k gate dielectric and method forming same | Electricity | 0 | Active |
| US12300738B2 | Semiconductor device and manufacturing method for the semiconductor device | Electricity | 0 | Active |
| US11823894B2 | Semiconductor devices and methods of manufacture | Electricity | 0 | Active |
| US11264489B2 | Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.