Thomas Lorne
2Patents
0h-index
8Co-inventors
24Inventor score
Filing activity: Mar 25, 2020 → Dec 15, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US11848191B2 | RF substrate structure and method of production | Electricity | 0 | Active |
| US12119258B2 | Semiconductor structure comprising a buried porous layer for RF applications | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.