Semiconductor structure comprising a buried porous layer for RF applications
US12119258B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Mar 25, 2020 |
| Grant date | Oct 15, 2024 |
| Priority date | — |
| Expiry date | Nov 15, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure for radio frequency applications includes a support substrate made of silicon and comprising a mesoporous layer, a dielectric layer arranged on the mesoporous layer and a superficial layer arranged on the dielectric layer. The mesoporous layer comprises hollow pores, the internal walls of which are mainly lined with oxide. The mesoporous layer has a thickness between 3 and 40 microns and a resistivity greater than 20 kohm·cm over its entire thickness. The support substrate has a resistivity between 0.5 and 4 ohm·cm. The invention also relates to a method for producing such a semiconductor structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.