RF substrate structure and method of production
US11848191B2 · kind B2 · utility
0Cited by
2References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 15, 2021 |
| Grant date | Dec 19, 2023 |
| Priority date | — |
| Expiry date | Dec 15, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N30/073
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Producing a semiconductor or piezoelectric on-insulator type substrate for RF applications which is provided with a porous layer under the BOX layer and under a layer of polycrystalline semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.