Method of producing a thin silicon-on-insulator layer

US4601779A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• John R. Abernathey · Jericho, US
• Jerome B. Lasky · South Burlington, US
• Larry A. Nesbit · Williston, US
• Thomas O. Sedgwick · Ossining, US
• Scott R. Stiffler · Hopewell Junction, US

Key dates

• Filing date: Jun 24, 1985
• Grant date: Jul 22, 1986
• Expiry date: Jun 24, 2005

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/2007
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of forming a thin silicon layer upon which semiconductor devices may be constructed. An epitaxial layer is grown on a silicon substrate, and oxygen or nitrogen ions are implanted into the epitaxial layer in order to form a buried etch-stop layer therein. An oxide layer is grown on the epitaxial layer, and is used to form a bond to a mechanical support wafer. The silicon substrate is removed using grinding and/or HNA, the upper portions of the epitaxy are removed using EDP, EPP or KOH, and the etch-stop is removed using a non-selective etch. The remaining portions of the epitaxy forms the thin silicon layer. Due to the uniformity of the implanted ions, the thin silicon layer has a very uniform thickness.