Xing Chen
3Patents
1h-index
14Co-inventors
45Inventor score
Filing activity: Jun 23, 1997 → Mar 26, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6051114A | Use of pulsed-DC wafer bias for filling vias/trenches with metal in HDP physical vapor deposition | Electricity | 215 | Expired |
| US11705490B2 | Graded doping in power devices | Electricity | 0 | Active |
| US11830824B2 | Edge protection on semiconductor substrates | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.