Edge protection on semiconductor substrates
US11830824B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2021 |
| Grant date | Nov 28, 2023 |
| Priority date | — |
| Expiry date | Jul 28, 2041 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Exemplary methods of processing a semiconductor substrate may include forming a layer of dielectric material on the semiconductor substrate. The methods may include performing an edge exclusion removal of the layer of dielectric material. The methods may include forming a mask material on the semiconductor substrate. The mask material may contact the dielectric material at an edge region of the semiconductor substrate. The methods may include patterning an opening in the mask material overlying a first surface of the semiconductor substrate. The methods may include etching one or more trenches through the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.