Yan Ping SHEN
6Patents
2h-index
19Co-inventors
37Inventor score
Filing activity: Jul 19, 2013 → Mar 3, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9331159B1 | Fabricating transistor(s) with raised active regions having angled upper surfaces | Electricity | 7 | Active |
| US9418899B1 | Method of multi-WF for multi-Vt and thin sidewall deposition by implantation for gate-last planar CMOS and FinFET technology | Electricity | 6 | Active |
| US9312145B2 | Conformal nitridation of one or more fin-type transistor layers | Electricity | 2 | Active |
| US9698269B2 | Conformal nitridation of one or more fin-type transistor layers | Electricity | 1 | Active |
| US9202697B2 | Forming a gate by depositing a thin barrier layer on a titanium nitride cap | Electricity | 0 | Active |
| US10515767B2 | Mesoscopic framework for organic-inorganic perovskite based photoelectric conversion device and method for manufacturing the same | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.