Conformal nitridation of one or more fin-type transistor layers

US9312145B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Wei Tong · Troy, US
• Tien Ying Luo · Austin, US
• Yan Ping SHEN · Saratoga Springs, US
• Feng Zhou · Ann Arbor, US
• Jun Lian · Mechanicville, US
• Haoran SHI · Goleta, US
• Min-hwa Chi · Palo Alto, US
• Jin Ping Liu · Ballston Lake, US
• Haiting Wang · Clifton Park, US
• Seung Kim · Bodden Town, KY

Key dates

• Filing date: Mar 7, 2014
• Grant date: Apr 12, 2016
• Expiry date: Mar 7, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02252
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Fin-type transistor fabrication methods and structures are provided having one or more nitrided conformal layers, to improve reliability of the semiconductor device. The method includes, for example, providing at least one material layer disposed, in part, conformally over a fin extending above a substrate, the material layer(s) including a gate dielectric layer; and performing a conformal nitridation process over an exposed surface of the material layer(s), the conformal nitridation process forming an exposed, conformal nitrided surface.