Forming a gate by depositing a thin barrier layer on a titanium nitride cap
US9202697B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Jul 19, 2013 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Jul 19, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes forming a gate structure by growing an interfacial layer on a substrate, depositing a High K layer on the interfacial layer, depositing a TiN Cap on the High K layer and forming a thin barrier layer on the TiN Cap. The gate structure is annealed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.