Inventor · Yokohama, JP

Yoichi Ohshima

10Patents
7h-index
13Co-inventors
63Inventor score

Filing activity: Aug 9, 1990 → May 5, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US5019527A Method of manufacturing non-volatile semiconductor memories, in which selective removal of field oxidation film for forming source region and self-adjusted treatment for forming contact portion are simultaneously performed Electricity 47 Expired
US5365112A Semiconductor integrated circuit device having an improved bonding pad structure Electricity 44 Expired
US5194929A Nonvolatile semiconductor memory and a memory of manufacturing the same Electricity 25 Expired
US5763321A Method of manufacturing semiconductor device utilizing selective CVD method Electricity 23 Expired
US5547884A Method of manufacturing a semiconductor memory device having a common source region Electricity 18 Expired
US5476814A Method of manufacturing semiconductor device utilizing selective CVD method Electricity 15 Expired
US5920528A Optical disc apparatus and method of tracking control of optical disc apparatus Physics 8 Expired
US5394001A Nonvolatile semiconductor memory device having reduced resistance value for the common source wiring region Electricity 7 Expired
US9715381B2 Information processing apparatus, information processing system, information processing method, and non-transitory computer-readable storage medium having stored therein an information processing program Emerging Cross-Sectional Technologies 3 Active
US9361091B2 Information processing apparatus, information processing system, information processing method, and non-transitory computer-readable storage medium having stored therein an information processing program Emerging Cross-Sectional Technologies 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.