Plasma treatment process for in-situ chamber cleaning efficiency enhancement in plasma processing chamber
US10002745B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2016 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | May 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/335
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the disclosure include methods for in-situ chamber cleaning efficiency enhancement process for a plasma processing chamber utilized for a semiconductor substrate fabrication process. In one embodiment, a method for performing a plasma treatment process after cleaning a plasma process includes performing a cleaning process in a plasma processing chamber in absent of a substrate disposed thereon, subsequently supplying a plasma treatment gas mixture including at least a hydrogen containing gas and/or an oxygen containing gas into the plasma processing chamber, applying a RF source power to the processing chamber to form a plasma from the plasma treatment gas mixture, and plasma treating an interior surface of the processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.