Patent · US Active

Method of forming structures with V shaped bottom on silicon substrate

US10002759B2 · kind B2 · utility

2Cited by

0References

19Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Xinyu BAO · Mountain View, US
Chun YAN · San Jose, US
Errol Antonio C. Sanchez · Tracy, US

Key dates

Filing date	Jan 27, 2017
Grant date	Jun 19, 2018
Priority date	—
Expiry date	Jan 28, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/31111
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The present disclosure generally relate to methods of processing a substrate in an epitaxy chamber. The method includes applying a passivating agent containing antimony to portions of a silicon substrate exposed through trenches formed in a dielectric layer on the silicon substrate, while applying the passivating agent containing antimony, exposing the silicon substrate to a group IV-containing precursor to form an epitaxial layer having a V-shaped structure having an exposed (111) plane at a bottom of the trenches, and forming a semiconductor layer on the epitaxial layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.