Method for selectively etching silicon oxide with respect to an organic mask
US10002773B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 2016 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Oct 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76808
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for selectively etching trenches in a silicon oxide containing layer with an organic planarization layer is provided. Processing the silicon oxide layer comprises a plurality of process cycles, wherein each etch cycle comprises a deposition phase, comprising providing a flow of a deposition phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio, providing a constant RF power, which forms the deposition phase gas into a plasma, and stopping the deposition phase and an etch phase, comprising providing a flow of an etch phase gas comprising a fluorocarbon or hydrofluorocarbon containing gas with a fluorine to carbon ratio that is higher than the fluorine to carbon ratio of the deposition phase gas, providing a pulsed RF power, which forms the etch phase gas into a plasma, and stopping the etch phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.