Interconnection cells having variable width metal lines and fully-self aligned variable length continuity cuts
US10002786B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 2016 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Dec 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53257
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method includes providing a semiconductor structure having a mandrel layer and a hardmask layer disposed above a dielectric layer. A mandrel cell is patterned into the mandrel layer. An opening is etched into the hardmask layer. The opening is self-aligned with a sidewall of the mandrel. A refill layer is disposed over the structure and recessed down to a level that is below a top surface of the hardmask layer to form an opening plug that covers a bottom of the opening. The mandrel cell is utilized to form a metal line cell into the dielectric layer, the metal line cell having metal lines and a minimum line cell pitch. The opening plug is utilized to form a continuity cut in a metal line of the metal line cell. The continuity cut has a length that is larger than the minimum line cell pitch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.