Semiconductor device structure with conductive pillar and conductive line and method for forming the same
US10002826B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 27, 2014 |
| Grant date | Jun 19, 2018 |
| Priority date | — |
| Expiry date | Oct 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes a first dielectric layer over the semiconductor substrate. The semiconductor device structure includes a first conductive line embedded in the first dielectric layer. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive line. The semiconductor device structure includes a second conductive line over the second dielectric layer. The second dielectric layer is between the first conductive line and the second conductive line. The semiconductor device structure includes conductive pillars passing through the second dielectric layer to electrically connect the first conductive line to the second conductive line. The conductive pillars are spaced apart from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.