Titanium aluminum and tantalum aluminum thin films

US10002936B2 · kind B2 · utility

Assignee

• ASM IP Holding B.V. · NL

Inventors

• Suvi Haukka · Helsinki, FI
• Michael Eugene Givens · Phoenix, US
• Eric James Shero · Phoenix, US
• Jerry Winkler · Gilbert, US
• Petri Raisanen · Gilbert, US
• Timo Asikainen · Helsinki, FI
• Chiyu Zhu · Helsinki, FI
• Jaakko Anttila · Helsinki, FI

Key dates

• Filing date: Oct 21, 2015
• Grant date: Jun 19, 2018
• Expiry date: Jun 27, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.