Enlarged sacrificial gate caps for forming self-aligned contacts
US10008385B1 · kind B1 · utility
1Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2017 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Jun 2, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a sacrificial gate cap and a self-aligned contact for a device structure. A gate electrode is arranged between a first sidewall spacer and a second sidewall spacer. A top surface of the gate electrode is recessed to open a space above the top surface of the recessed gate electrode that partially exposes the first and second sidewall spacers. Respective sections of the first and second sidewall spacers, which are arranged above the top surface of the recessed gate electrode, are removed in order to increase a width of the space. A sacrificial cap is formed in the widened space.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.