Method for collapse-free drying of high aspect ratio structures
US10008396B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2015 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Apr 11, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67028
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for drying a substrate including a plurality of high aspect ratio (HAR) structures includes, after at least one of (i) wet etching, and (ii) wet cleaning, and (iii) wet rinsing the substrate using at least one of (a) wet etching solution, and (b) wet cleaning solution, and (c) wet rinsing solution, respectively, and without drying the substrate: depositing, between the plurality of HAR structures, a solution that includes a polymer component, a nanoparticle component, and a solvent; wherein as the solvent evaporates, a sacrificial bracing material precipitates out of solution and at least partially fills the plurality of HAR structures, the sacrificial bracing material including (i) polymer material from the polymer component of the solution and (ii) nanoparticle material from the nanoparticle component of the solution; and exposing the substrate to plasma generated using a plasma gas chemistry to volatilize the sacrificial bracing material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.