Patent · US Active

Separation method, computer storage medium, and separation system

US10008419B2 · kind B2 · utility

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0References
11Claims
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Key dates

Filing dateAug 22, 2012
Grant dateJun 26, 2018
Priority date
Expiry dateAug 22, 2032

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T156/1911
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A superposed wafer is separated to a processing target wafer and a supporting wafer while being heated. Then, an adhesive on a joint surface of the processing target wafer is removed by supplying an organic solvent onto the joint surface of the processing target wafer. Then, an oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed by supplying acetic acid to the joint surface of the processing target wafer. Then, the joint surface of the processing target wafer is inspected. Then, based on an inspection result, the adhesive on the joint surface of the processing target wafer is removed and the oxide film formed on the predetermined pattern on the joint surface of the processing target wafer is removed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.