Measuring device and method for measuring layer thicknesses and defects in a wafer stack
US10008424B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 25, 2016 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Feb 25, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67288
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for measuring and/or acquiring layer thicknesses and voids of one or more layers of a temporary bonded wafer stack on a plurality of measuring points is provided. A sequence of the method includes an arrangement of a measurement means for measuring and/or acquiring the layer thicknesses and voids of the layers of the wafer stack at the measuring points relative to a flat side of the wafer stack. The sequence further includes an emission of signals in the form of electromagnetic waves by a transmitter of the measurement means, and a receiving the signals which have been reflected by the wafer stack by a receiver of the measurement means. The sequence also includes an evaluation of the signals which have been received by the receiver by an evaluation unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.