Low capacitance electrostatic discharge (ESD) devices
US10008491B1 · kind B1 · utility
7Cited by
9References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 20, 2017 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Jul 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/611
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to low capacitance electrostatic discharge (ESD) devices and methods of manufacture. The structure includes: a first structure comprising a pattern of a first diffusion region, a second diffusion region and a third diffusion region partly extending over a first well; and a second structure comprising a fourth diffusion region in a second well electrically connecting to the first structure to form a silicon controlled rectifier (SCR) on a bulk region of a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.