Devices with specific termination angles in titanium tungsten layers and methods for fabricating the same
US10009001B2 · kind B2 · utility
25Cited by
4References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 11, 2016 |
| Grant date | Jun 26, 2018 |
| Priority date | — |
| Expiry date | Apr 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/251
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Method of forming a termination angle in a titanium tungsten layer include providing a titanium tungsten layer and applying a photo resist material to the titanium tungsten layer. The photo resist material is exposed under a defocus condition to generate a resist mask, wherein an edge of the exposed photo resist material corresponds to the sloped termination. The titanium tungsten layer is etched with an etching material, wherein the etching material at least partially etches the photo resist material exposed under the defocused condition, and wherein the etching results in the sloped termination in the titanium tungsten layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.