Method of making composite polishing layer for chemical mechanical polishing pad

US10011002B2 · kind B2 · utility

Assignees

• Rohm and Haas Electronic Materials CMP Holdings, Inc. · US
• DOW GLOBAL TECHNOLOGIES LLC · US

Inventors

• Bainian Qian · Newark, US
• Teresa Brugarolas Brufau · Philadelphia, US
• Julia Kozhukh · Cambridge, US
• David Michael Veneziale · Hatfield, US
• Yuhua Tong · Hockessin, US
• Diego Lugo · Newark, US
• George C. Jacob · Newark, US
• Jeffrey B. Miller · Brookline, US
• Tony Quan Tran · Bear, US
• Marc R. Stack · Middletown, US
• Andrew Wank · Avondale, US
• Jeffrey James Hendron · Elkton, US

Key dates

• Filing date: Jun 26, 2015
• Grant date: Jul 3, 2018
• Expiry date: Aug 11, 2036

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B24B37/24
• WIPO field: Machine tools
• WIPO sector: Mechanical engineering

Abstract

A method of forming a chemical mechanical polishing pad composite polishing layer is provided, including: providing a first polishing layer component of a first continuous non-fugitive polymeric phase having a plurality of periodic recesses; discharging a combination toward the first polishing layer component at a velocity of 10 to 300 msec, filling the plurality of periodic recesses with the combination; allowing the combination to solidify in the plurality of periodic recesses forming a second non-fugitive polymeric phase giving a composite structure; and, deriving the chemical mechanical polishing pad composite polishing layer from the composite structure, wherein the chemical mechanical polishing pad composite polishing layer has a polishing surface on the polishing side of the first polishing layer component; and wherein the polishing surface is adapted for polishing a substrate.