Fin-type field effect transistors with single-diffusion breaks and method
US10014296B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2017 |
| Grant date | Jul 3, 2018 |
| Priority date | — |
| Expiry date | Apr 14, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0149
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a method of forming a semiconductor structure that includes one or more fin-type field effect transistors (FINFETs) and single-diffusion break (SDB) type isolation regions that are within a semiconductor fin and that define the active device region(s) for the FINFET(s). The isolation regions are formed so that they include a semiconductor liner. The semiconductor liner ensures that, when a source/drain recess is formed immediately adjacent to the isolation region, the bottom and opposing sides of the source/drain recess will have semiconductor surfaces onto which epitaxial semiconductor material for a source/drain region is grown. As a result, the angle of the top surface of the source/drain region relative to the top surface of the semiconductor fin is minimized. Thus, the risk that a subsequently formed source/drain contact will not reach the source/drain region is also minimized. Also disclosed is a semiconductor structure formed according to the method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.