Patent · US Active

Semiconductor device having a defined oxygen concentration

US10014400B2 · kind B2 · utility

1Cited by

0References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Helmut Oefner · Zorneding, DE
Nico Caspary · Munich, DE
Mohammad Momeni · Villach, AT
Reinhard Ploss · Munich, DE
Francisco Javier Santos Rodriguez · Villach, AT
Hans-Joachim Schulze · Taufkirchen, DE

Key dates

Filing date	Jul 14, 2017
Grant date	Jul 3, 2018
Priority date	—
Expiry date	Jul 14, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/53
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device includes: a semiconductor substrate having a first side, a second side opposite the first side, and a thickness; at least one semiconductor component integrated in the semiconductor substrate; a first metallization at the first side of the semiconductor substrate; and a second metallization at the second side of the semiconductor substrate. The semiconductor substrate has an oxygen concentration along a thickness line of the semiconductor substrate which has a global maximum at a position of 20% to 80% of the thickness relative to the first side. The global maximum is at least 2-times larger than the oxygen concentrations at each of the first side and the second side of the semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.