Inventor · Zorneding, DE

Helmut Oefner

26Patents
2h-index
20Co-inventors
53Inventor score

Filing activity: Jun 24, 2014 → Aug 22, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US9245811B2 Method for postdoping a semiconductor wafer Electricity 6 Active
US9559020B2 Method for postdoping a semiconductor wafer Electricity 2 Active
US9312120B2 Method for processing an oxygen containing semiconductor body Electricity 1 Active
US9779931B2 Method of manufacturing semiconductor wafers and method of manufacturing a semiconductor device Electricity 1 Active
US11742215B2 Methods for forming a semiconductor device Electricity 1 Active
US10014400B2 Semiconductor device having a defined oxygen concentration Electricity 1 Active
US9972704B2 Method for forming a semiconductor device and a semiconductor device Electricity 1 Active
US9721907B2 Wafer edge shape for thin wafer processing Electricity 1 Active
US10273597B2 Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device Electricity 0 Active
US9728395B2 Method for manufacturing a semiconductor wafer, and semiconductor device having a low concentration of interstitial oxygen Electricity 0 Active
US10957767B2 Semiconductor device, silicon wafer and method of manufacturing a silicon wafer Electricity 0 Active
US10319599B2 Methods of planarizing SiC surfaces Electricity 0 Active
US10026816B2 Semiconductor wafer and manufacturing method Electricity 0 Active
US10724149B2 Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device Electricity 0 Active
US9728627B2 Method for forming a semiconductor device and a semiconductor device General 0 Revoked
US9853137B2 Method for forming a semiconductor device and a semiconductor device General 0 Revoked
US12211703B2 Methods for forming a semiconductor device having a second semiconductor layer on a first semiconductor layer Electricity 0 Active
US10529838B2 Semiconductor device having a variable carbon concentration Electricity 0 Active
US10837120B2 Method of manufacturing CZ silicon wafers, and method of manufacturing a semiconductor device Electricity 0 Active
US10317338B2 Method and assembly for determining the carbon content in silicon Physics 0 Active
US9536838B1 Single crystal ingot, semiconductor wafer and method of manufacturing semiconductor wafers Electricity 0 Active
US9934988B2 Method for processing a silicon wafer Electricity 0 Active
US9972488B2 Method of reducing defects in an epitaxial layer Electricity 0 Active
US9754787B2 Method for treating a semiconductor wafer Electricity 0 Active
US10566198B2 Doping method Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.