Methods of reading and writing data in a thyristor random access memory
US10020043B2 · kind B2 · utility
2Cited by
35References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2017 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Feb 7, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D18/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A volatile memory array using vertical thyristors is disclosed together with methods of operating the array to read data from and write data to the array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.