Semiconductor devices and methods of forming the same
US10020273B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 8, 2016 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | Nov 18, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to aspects provided herein, a semiconductor device may include a bump providing improved reliability and reduced size. In some aspects, a conductive pad may be formed on a substrate, and a conductive support layer, which may be a pillar, may be formed on the conductive pad. An intermetallic compound (IMC) layer may be formed on the conductive support layer, and a solder layer may be formed on the IMC layer. In some aspects, the conductive support layer may be of a smaller width than the IMC layer. In some aspects, the conductive support layer may have side surfaces which are wider at the solder side than at the conductive pad side. In some aspects, other layers may be formed, such as a seed layer between the conductive pad and the conductive support layer, or a barrier layer between the conductive support layer and the IMC layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.