Embedded bottom metal contact formed by a self-aligned contact process for vertical transistors
US10020381B1 · kind B1 · utility
11Cited by
14References
4Claims
0Family size
Assignee
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Key dates
| Filing date | May 17, 2017 |
| Grant date | Jul 10, 2018 |
| Priority date | — |
| Expiry date | May 17, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments are directed to a method and resulting structures for a vertical field effect transistor (VFET) having an embedded bottom metal contact. A semiconductor fin is formed on a doped region of a substrate. A portion of the doped region adjacent to the semiconductor fin is recessed and an embedded contact is formed on the recessed portion. A material of the conductive rail is selected such that a conductivity of the embedded contact is higher than a conductivity of the doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.