Inventor · Guilderland, NY, US

Heng Wu

168Patents

11h-index

66Co-inventors

75Inventor score

Filing activity: Jan 12, 2017 → Dec 27, 2023

Most-cited inventions

Patent	Title	Area	Cited by	Status
US10229985B1	Vertical field-effect transistor with uniform bottom spacer	Electricity	267	Active
US10566246B1	Shared contact trench comprising dual silicide layers and dual epitaxial layers for source/drain layers of NFET and PFET devices	Electricity	29	Active
US10056289B1	Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gap	Electricity	25	Active
US10243061B1	Nanosheet transistor	Electricity	21	Active
US10236364B1	Tunnel transistor	Electricity	15	Active
US10084094B1	Wrapped source/drain contacts with enhanced area	Electricity	14	Active
US10522649B2	Inverse T-shaped contact structures having air gap spacers	Electricity	13	Active
US10797163B1	Leakage control for gate-all-around field-effect transistor devices	Electricity	12	Active
US10134859B1	Transistor with asymmetric spacers	Electricity	12	Active
US10388569B1	Formation of stacked nanosheet semiconductor devices	Electricity	12	Active
US10020381B1	Embedded bottom metal contact formed by a self-aligned contact process for vertical transistors	Electricity	11	Active
US10985064B2	Buried power and ground in stacked vertical transport field effect transistors	Electricity	9	Active
US11177258B2	Stacked nanosheet CFET with gate all around structure	Electricity	8	Active
US10249755B1	Transistor with asymmetric source/drain overlap	Electricity	6	Active
US10727315B2	Nanosheet transistor	Electricity	6	Active
US9947767B1	Self-limited inner spacer formation for gate-all-around field effect transistors	Electricity	5	Active
US11049953B2	Nanosheet transistor	Electricity	5	Active
US10910470B1	Nanosheet transistors with inner airgaps	Electricity	4	Active
US11362193B2	Inverse T-shaped contact structures having air gap spacers	Electricity	4	Active
US10332983B1	Vertical field-effect transistors including uniform gate lengths	Electricity	4	Active
US10332999B1	Method and structure of forming fin field-effect transistor without strain relaxation	Electricity	4	Active
US11011617B2	Formation of a partial air-gap spacer	Electricity	3	Active
US10374089B2	Tensile strain in NFET channel	Electricity	3	Active
US10170590B2	Vertical field effect transistors with uniform threshold voltage	Electricity	3	Active
US11251362B2	Stacked spin-orbit-torque magnetoresistive random-access memory	Electricity	3	Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.