Patent · US Active

Method for manufacturing a bipolar junction transistor

US10020387B2 · kind B2 · utility

1Cited by
1References
21Claims
0Family size

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Inventors

Key dates

Filing dateMar 8, 2017
Grant dateJul 10, 2018
Priority date—
Expiry dateMar 8, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D62/8325

Abstract

Embodiments provide a method for manufacturing a bipolar junction transistor, comprising:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.