Atomic layer deposition of films comprising silicon, carbon and nitrogen using halogenated silicon precursors

US10023958B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Victor Nguyen · Novato, US
• Ning Li · White Plains, US
• Mihaela Balseanu · Sunnyvale, US
• Li-Qun Xia · Santa Clara, US
• Mark Saly · Santa Clara, US
• David Thompson · San Jose, US

Key dates

• Filing date: Nov 5, 2014
• Grant date: Jul 17, 2018
• Expiry date: Jun 18, 2035

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/45542
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.