Method for manufacturing semiconductor device
US10026622B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2016 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Aug 31, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a method for manufacturing a semiconductor device includes forming a hole extending in a first direction in a workpiece. The method includes forming a first film on an upper surface of the workpiece and an upper portion of a side wall of the hole. The method includes forming a second film on the first film. The method includes removing portions of the first and second films from the upper surface of the workpiece so that at least a part of the first and second films formed on the upper portion remain. The method includes removing at least a part of a portion of the workpiece which is exposed through the hole using a second etchant. An etching rate of the first etchant for the first film is higher than an etching rate of the first etchant for the second film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.