Semiconductor device including a repeater/buffer at higher metal routing layers and methods of manufacturing the same
US10026751B2 · kind B2 · utility
1Cited by
4References
17Claims
0Family size
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Key dates
| Filing date | Jul 14, 2016 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Jul 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a series of metal routing layers and a complementary pair of planar field-effect transistors (FETs) on an upper metal routing layer of the metal routing layers. The upper metal routing layer is M3 or higher. Each of the FETs includes a channel region of a crystalline material. The crystalline material may include one or more transition metal dichalcogenide materials such as MoS2, WS2, WSe2, and/or combinations thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.