Implementation of VMCO area switching cell to VBL architecture
US10026782B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jun 26, 2017 |
| Grant date | Jul 17, 2018 |
| Priority date | — |
| Expiry date | Jul 8, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Systems and methods for improving performance of a non-volatile memory that utilizes a Vacancy Modulated Conductive Oxide (VMCO) structure are described. The VMCO structure may include a layer of amorphous silicon (e.g., a Si barrier layer) and a layer titanium oxide (e.g., a TiO2 switching layer). In some cases, the VMCO structure or VMCO stack may use bulk switching or switching O-ion movements across an area of the VMCO structure, as opposed to switching locally in a constriction of vacancy formed filamentary path. A VMCO structure may be partially or fully embedded within a word line layer of a memory array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.